The features of the intrinsic photoconductivity spectra of zinc sulphide compensated with silver

Main Article Content

Kazim A. Aliyev
https://orcid.org/0009-0008-3521-3352
Saadat O. Mammadova
https://orcid.org/0009-0003-6960-7791
Aytan N. Sultanova
https://orcid.org/0000-0003-0472-3647
Ahmad I. Ahmadov
https://orcid.org/0009-0008-2548-3885
İcabikə Z. Sardarova
Abdulaga N. Gurbanov

Abstract

The intrinsic photoconductivity of silver-doped zinc sulphide (ZnS:Ag) was investigated. It was shown that doping with silver leads to significant modifications in the electronic structure and optical properties of ZnS due to the formation of localized energy levels within the band gap. Mechanical polishing of the sample surface results in the appearance of an additional photoconductivity maximum near the fundamental absorption edge, which gradually disappears during sample aging. These effects are attributed to the compensation of donor and acceptor states, as well as changes in charge carrier recombination mechanisms. The dependence of the photoconductivity spectrum on aging time, applied electric field, and the position of illumination relative to the contacts was established. The results are explained by variations in the lifetime of non-equilibrium charge carriers with depth. A qualitative model describing the photoconductivity spectra is proposed, taking into account the influence of silver compensation on the energy structure of ZnS. The proposed model provides insight into photoconductive mechanisms and supports the development of ZnS-based optoelectronic materials.

Downloads

Download data is not yet available.

Metrics

Metrics Loading ...

Article Details

How to Cite
[1]
K. A. Aliyev, S. O. Mammadova, A. N. Sultanova, A. I. Ahmadov, İcabikə Z. Sardarova, and A. N. Gurbanov, “The features of the intrinsic photoconductivity spectra of zinc sulphide compensated with silver”, J. Serb. Chem. Soc., Jun. 2026.
Section
Physical Chemistry

References

S.Thirumavalavan, K. Mani, S. Sagadevan, Sci. Res. Essays 10 (2015) 362 (https://doi.org/10.5897/sre2015.6244)

S.Jeong, S.Park, App. Sci. 12 (2022) 8393 (https://doi.org/10.3390/app12178393)

A. Bera, D. Basak D, ACS App. Mat. Sci. 2 (2012) 408 (https://doi.org/10.1021/am900686c)

C. Galassi, N. Lecis, Energies 16 (2023) 6409 (https://doi.org/10.3390/en16176409)

M. M. H. Farooqi, R. K. Srivastava, Mat. Sci. Semicond. Process. 20(1) (2014) 61 (https://dx.doi.org/10.1016/j.mssp.2013.12.028)

R. Srivastava, N. Pandey, S. Mishra, Mat. Sci. Semicond. Process. 16(6) (2013) 1659 (https://dx.doi.org/10.1016/j.mssp.2013.06.009)

A. K. Shahi, B. K. Pandey, S. C. Singh, R. Gopal, J. Alloys Comp. 588 (2014) 440 (https://dx.doi.org/10.1016/j.jallcom.2013.11.056)

A. Shahi, R. Shankar, B. Pandey, R. Gopal, Mat. Res. Inn. 28(3) (2024) 184 (https://dx.doi.org/10.1080/14328917.2023.2250625)

Z. Zhang, K. Wang, K. Zheng, S. Deng, N. Xu, J. Chen, ACS Photonics 5(10) (2018) 4147 (https://dx.doi.org/10.1021/acsphotonics.8b00949)

R. Singh, N. Unnikrishnan, M. Matera, J. Phys. Chem. Solids 49(1) (1988) 79 (https://dx.doi.org/10.1016/0022-3697(88)90138-2)

J. Rufat, J. Nanosci. Res. Rep. 3 (2021) 1 (https://dx.doi.org/10.47363/jnsrr/2021(3)128 )

V. Porter, S. Geyer, J. Halpert, M. Kastner, M. Bawend, J. Phys. Chem. C 112 (2008) 2231 (https://dx.doi.org/10.1021/jp710173q)

M. Ahmad, K. Rasool, M. A. Rafiq, M. M. Hasan, Appl. Phys. Lett. 101 (2012) 223103 (https://doi.org/10.1063/1.4768784)

M. M. H. Farooqi, R. K. Srivastava, J. Alloys Comp. 691 (2017) 275 (https://dx.doi.org/10.1016/j.jallcom.2016.08.245)

N. Suganthi, K. Pushpanathan, Int. J. Env. Sci. Tech. 16 (7) (2019) 3375 (https://dx.doi.org/10.1007/s13762-018-1811-y)

N. Susha, K. Nandaakumar, S. S. Nair, RSC Adv. 8(21) (2018) 11330 (https://dx.doi.org/10.1039/c7ra13116j)

K. O. Olumurewa, S. A. Adeweinbi, A. A. Willoughby, M. A. Eleruja, Phase Trans. 95(8-9) (2022) 567 (https://dx.doi.org/10.1080/01411594.2022.2093199)

G. Wary, M. Sarma, Indian J. Pure Appl. Phys. 54(6) (2016) 379, ISSN 00195596

S. Bhushan, L. C. Giriya, Photoconductivity of (ZnS, CdSe): Dy in Crystal Research and Technology Vol. 22 No 9, H. Neel et al (Eds), De Gruyter (1987) (https://dx.doi.org/10.1515/9783112485569-015)

Z. Zhang, C. Chen Wang, S. Deng, J. Chen, Adv. Mat. Interf. 9(9) (2022) 2102268 (https://dx.doi.org/10.1002/admi.202102268)

I. Uddin, Adv. Nano Res. 3(1) (2020) 46 (https://dx.doi.org/10.21467/anr.3.1.46-50)

M. Freitag, T. Low, F. Xia, P. Avorius, Nature Photonics 7 (2013) 53 (https://doi.org/10.1038/nphoton.2012.314)

S. Hullavarad, N. Hullavarad, D. Look, B. Claflin, Nanoscale Res. Let. 4 (2009) 1421 (https://doi.org/10.1007/s11671-009-9414-7)

E. R. Draper, L. J. Archibald, M. C. Nolan, R. Schweins, M. A. Zwijnenburg, S. Sproules, D. J. Adams, ChemEurJ 24 (2018) 4006 (https://doi.org/10.1002/chem.201800201)

A. Di Bartolomeo, A. Kumar, O. Durante, A. Sessa, E. Faella, L. Viscardi, K. Intonti, F. Giubileo, N. Martucciello, P. Romano, S. Sleziona, M. Schleberger, Mat. Today Nano 24 (2023) 100382 (https://doi.org/10.1016/j.mtnano.2023.100382)

M. Ibraheem, E. Verrelli, A. M. Adawi, J.-S. G. Bouillard, Mary O’Neill, ACS Omega 9 (2024) 10169 (https://doi.org/10.1021/acsomega.3c06932)

Ph. V. Makarenko, N. N. Pribylov, S. I. Rembeza, V. A. Mel’nik, Semiconductors 42 (2008) 528 (https://link.springer.com/article/10.1134/S1063782608050072)

D.Xue, Y.Zhang, W. Gong, Y. Yin, Z. Wang, L. Huang, L. Chi, Sci. China Chem. 65 (2022) 2567 (https://doi.org/10.1007/s11426-022-1368-7)

R. F. Babayeva, A. Sh. Abdinov, S. I. Amirova, N. A. Ragimova, E. A. Rasulov, UNEC J. Eng. Appl. Sci. 3(1) (2023) 5 (https://doi.org/10.61640/ujeas.2023.0501)

A.M. El-Naggar, A. A. Albassam, G. L. Myronchuk, O. V. Zamuruyeva, I. V. Kityk, P. Rakus, O. V. Parasyuk, J. Jędryka, V. Pavlyuk, M. Piaseck, Mat. Sci. Semicond. Process. 86 (2018) 101 (https://doi.org/10.1016/j.mssp.2018.06.019).